STATIC AND DYNAMIC CHARACTERISTICS OF IGBT AND MOS — MOE Lab Tender Details

• Study of V-I Characteristics of IGBT
• Study of V-I Characteristics of MOSFET
• Study of Gate Drive Characteristics of IGBT
• Study of Gate Drive Characteristics of MOSFET

TECHNICAL SPECIFICATIONS:

Digital Meters:

• Voltmeter 20VDC.
• Ammeter 200mA DC.
• Voltmeter 200V DC.

Power Supplies:

• DC Supply IC Regulated 0-10V DC, 150mA.
• DC Supply IC Regulated 0-30V DC, 150mA.
• Operated on Mains power 230V, 50Hz +10%

Components are mounted on the panels are:

• IGBT 25N120 (2Nos.).
• MOSFET 1RF540 (2Nos.)
• Voltage Control through Potentiometer.
• PWM Pulse Generator Circuit.
• Frequency Control Through Potentiometer
• PWM Control Through Potentiometer
• Resistors for Load

FEATURES:

• Protection Cover
• Front panel built with high class insulated Printed Circuit Board sheet with well printed circuits and      symbols.
• Fuse for Short Circuit protection
• Instruction manual.
• Connections are brought out through 2mm Colored Sockets.
• Patch Cords 2mm.
• The trainer is housed in ABS Plastic cabinet.
• Size of the trainer set 12”x8”